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Deadline10/12/2024
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Published11/12/2024
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Today20/03/2025
Utilities
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Framework contract SiC gap switch Text automatically translated in your browsing language Automatically translated
Note: Not all information for this procedure were successfully computed. Please consult linked documents for more details.
Development and production of fast semiconductor gap switches based on silicon carbide technology (SiC). Their field of application is the short-circuiting of high-frequency cavities in the synchrotron and storage rings at GSI and FAIR for impedance reduction during high-intensity beam operation. Text automatically translated in your browsing language Automatically translated
https://www.dtvp.de/Satellite/notice/CXS0YYEY1WQDG6R4
https://www.dtvp.de/Satellite/notice/CXS0YYEY1WQDG6R4
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