Supply of low-temperature epitaxy equipment such as RPCVD Text automatically translated in your browsing language Automatically translated

For its research activities focused on the development of FD-SOI technologies of 10 nm and beyond, CEA-LETI wishes to acquire epitaxy equipment in order to meet future technological challenges. This Reduced Pressure Chemical Vapor Deposition (RPCVD) equipment must be capable of in situ, non-selective and selective (types N and P) growth by intrinsic and doped epitaxy of Group IV semiconductors at high and low temperatures (from 1100°C to 300°C) on 300 mm silicon wafers. The proposed market includes the following mandatory costing options: - Option 1: Engraving chamber for optimising the contact, as described in points 2.7 and 3.1.5 of the specification. - Option 2: Engraving chamber for the lateral recess, as described in paragraphs 2.8 and 3.1.8 of the specification. - Option 3: Connection of the equipment with a vacuum box for the transport of plates, as described in point 3.4 of the specification. It also includes the following optional costing options: - Option 4: Pumping systems, as described in paragraph 3.2.1 of the specification. - Option 5: Temperature control systems, as described in paragraph 3.2.6 of the specification. - Option 6: Electrical transformer, as described in paragraph 4.1.4 of the specification). - Option 7: Level 1 maintenance training, as described in paragraph 9 of the tender specifications). - Option 8: Advanced maintenance training, as described in paragraph 9 of the tender specifications). - Option 9: Second year of guarantee, as described in paragraph 11 of the tender specifications). Text automatically translated in your browsing language Automatically translated

31712100 - Microelectronic machinery and apparatus

38000000 - Laboratory, optical and precision equipments (excl. glasses) CVP code deduced from the text of the procedure AI-generated