ICP-RIE plasma etching system for cryogenic dry etching of silicon, silicon dioxide, etc. Text automatically translated in your browsing language Automatically translated

The object of the contract is an ICP-RIE plasma etching system for the structuring of micro- and nano-optical elements, specifically proportional and binary plasma etching in dielectric, semiconducting materials and functional layers (quartz glass /fused silica, silicon, SiOxNy , silicon carbide, high-breaking materials such as Ta2O5, Nb2O5, etc.) by means of fluorine-based reactive gas processes even at, but not exclusively cryogenic temperatures around -130°C. The system with loading sluice (Loadlock, LL) must enable the processing of variable substrate sizes by means of carriers without large processing and time expenditure. A fast, variable change of the substrate electrode cooling between cooling by means of a deep-freeze thermostat and liquid nitrogen is to be strived for. At least, however, there must be the possibility of retrofitting to liquid nitrogen cooling without structural changes to the substrate electrode. See Annex 2 for further details. Text automatically translated in your browsing language Automatically translated

38000000 - Laboratory, optical and precision equipments (excl. glasses)